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  uniso nic technologies co., ltd uf 3n25 z p ower mosfet www.unisonic.com.tw 1 of 3 copyright ? 20 1 3 unisonic technologies co., ltd qw - r502 - 760.d 3 a, 250 v n - channel power mosfet ? description the utc uf 3n25 z is an n - channel enhancement mode power mos fet using utc ? s advanced technology to provide cu st o mers with a minimum on - state resistance , low gate charge and superior switching performance. ? featur es * r ds(on) < 1.7 @ v gs =10v , i d = 3 a * high s witching speed * t ypical ly 3 .2 nc l ow g ate c harge * 100% a valanche t ested ? symbo l 1.gate 2.drain 3.source to-252 1 to-251 sot-223 1 1 ? ordering information order ing number package pin assign ment packing lead free halogen free 1 2 3 uf 3n25 z l - aa 3 - r uf 3n25 z g - aa 3 - r sot - 223 g d s tape reel uf 3n25 z l - tm3 -t uf 3n25 z g - tm3 -t to -251 g d s tube uf 3n25 z l - tn3 - r uf 3n25 z g - tn3 - r to - 252 g d s tape reel uf 3n25 z l - tn3 - t uf 3n25 z g - tn3 - t to - 252 g d s tube note : pin assignment: g: gate d: drain s: source uf3n25zl-aa3-r (1)packing type (2)package type (3)lead free (1) r: tape reel, t: tube (2) aa3: sot-223, tm3: to-251, tn3: to-252 (3) l: lead free, g: halogen free
u f3n25 z p ower mosf et unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw - r50 2 - 760.d ? absolute maximum ratings parameter symbol ratings unit drain - source voltage v dss 250 v gate - source voltage v gss 20 v continuous drain current continuous i d 3 a pulsed i dm 12 a avalanche energy e as 52 mj power dissipation sot - 223 p d 0.8 w to - 251 /to - 252 1.14 w junction temperature t j +150 c storage temperature range t stg - 55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolu te maximum ratings are stress ratings only and functional device operation is not implied. ? electrical character istics parameter symbol test conditions min typ max unit off characteristics drain - source breakdown voltage bv dss i d = 25 0 a , v gs =0v 250 v dr ain - source leakage current i dss v ds = 250 v 1 a gate - source leakage current forward i gss v gs = + 20v, v ds =0v 10 a reverse v gs = - 20v, v ds =0v - 10 a on characteristics gate threshold voltage v gs (th) i d =250a 2 4 v static drain - source on - state resist ance r ds( on ) v gs =10v, i d = 3 a 1.7 dynamic parameters input capacitance c iss v gs = 0 v, v ds = 25v , f=1mhz 190 pf output capacitance c oss 80 pf reverse transfer capacitance c rss 30 pf switching parameters total gate charge q g v dd = 50 v, i d = 3 a, i g = 100 a, v gs =10v 3.2 nc gate to sou rce charge q gs 0.64 nc gate to drain charge q gd 1.6 nc turn - o n delay time t d(on) v dd = 30 v, i d = 1 a, r g = 25? , v gs =0~10v 20 ns rise time t r 90 ns turn - o ff delay time t d(off) 30 ns fall - time t f 50 ns source - drain diode ratings and characte ristics maximum body - diode continuous current i s 3 a maximum body - diode pulsed current i sm 12 a drain - source diode forward voltage v sd i s = 3 a 1.3 v
u f3n25 z p ower mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw - r502 - 760.c ? typical characteristics drain current vs. drain-source breakdown voltage drain current , i d (a) drain-source breakdown voltage , bv dss (v) 0.7 0 drain current vs. gate threshold voltage drain current , i d (a) gate threshold voltage, v th (v) 2.1 2.8 4.2 1.4 3.5 0 50 100 150 200 250 300 0 60 180 240 300 120 0 50 100 150 200 250 300 v ds =v gs drain-source on-state resistance characteristics drain current , i d (a) drain to source voltage, v ds (v) 0 0.2 0.5 0 0.1 0.2 0.3 0.4 v gs =10v 0.1 0.3 0.4 0.6 0.6 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) drain current , i d (a) 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0.5 1.2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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